• DocumentCode
    2207118
  • Title

    Reliability characterization of process charging impact on thin gate oxide

  • Author

    Lee, Y.-H. ; Wu, K. ; Sery, G. ; Miekle, N. ; Lin, W.

  • Author_Institution
    Intel Corp., Santa Clara, CA, USA
  • fYear
    1998
  • fDate
    4-5 Jun 1998
  • Firstpage
    38
  • Lastpage
    41
  • Abstract
    Process charging effects in sub-micron p- and nMOSFETs with 32 Å oxide are investigated using gate current, stepping JT, ramp voltage, hot carrier and bias-temperature stress techniques. A failure criterion for determination of proper gate oxide reliability is proposed
  • Keywords
    MOSFET; electric current; failure analysis; hot carriers; semiconductor device reliability; semiconductor device testing; thermal stresses; 32 angstrom; Si; SiO2-Si; bias-temperature stress; failure criterion; gate current stress; gate oxide reliability; hot carrier stress; nMOSFETs; pMOSFETs; process charging effects; process charging impact; ramp voltage stress; reliability characterization; stepping JT stress; thin gate oxide; Circuit testing; Diodes; Etching; Hot carriers; MOSFETs; Plasma applications; Sputtering; Stress; Voltage; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 1998 3rd International Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    0-9651577-2-5
  • Type

    conf

  • DOI
    10.1109/PPID.1998.725569
  • Filename
    725569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2207118