Title :
A novel salicide body-contacted structure for partially depleted SOI nMOSFETs
Author :
Yunlong, Liu ; Xinyu, Liu ; Zhiyong, Zhang ; He, Qian
Author_Institution :
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Abstract :
A novel salicide body-contacted structure compatible with bulk silicon process is presented in this paper for partially depleted SOI nMOSFETs. Simulation results show that the structure can eliminate the kink effect effectively and the drain breakdown voltage is improved considerably
Keywords :
MOSFET; elemental semiconductors; semiconductor device breakdown; semiconductor device reliability; silicon; silicon-on-insulator; Si; bulk silicon process; drain breakdown voltage; kink effect; partially depleted SOI nMOSFETs; salicide body-contacted structure; Cobalt; Etching; Impurities; MOS devices; MOSFET circuits; Resists; Schottky barriers; Semiconductor films; Silicides; Silicon;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981534
