Title :
Impact of etcher chamber design on plasma induced device damage for advanced oxide etching
Author :
Tao, H.J. ; Tsai, C.S. ; Lin, B.L. ; Su, C.W. ; Lin, S.P. ; Huang, Y.C. ; Sun, S.C.
Author_Institution :
Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
The effect of oxide etcher chamber design on plasma induced damage is investigated by antenna test structures associated with optical emission spectroscopy. It is found that the magnetically-enhanced RIE (MERIE) type etcher may have less plasma damage than inductive type etchers under certain conditions. The experimental data also suggests that the chamber design for a high density plasma etcher has a significant impact on the plasma induced damage and the damage level can be minimized by choosing a different etching chemistry. From the spectroscopic data, we also conclude that plasma induced UV radiation has an insignificant contribution compared to charging damage
Keywords :
design engineering; dielectric thin films; integrated circuit testing; integrated circuit yield; plasma materials processing; sputter etching; surface charging; ultraviolet radiation effects; MERIE type etcher; SiO2; antenna test structures; charging damage; etcher chamber design; etching chemistry; high density plasma etcher; inductive type etchers; magnetically-enhanced RIE; optical emission spectroscopy; oxide etcher chamber design; oxide etching; plasma damage; plasma induced UV radiation; plasma induced damage; plasma induced damage level minimization; plasma induced device damage; Etching; Plasma applications; Plasma chemistry; Plasma density; Plasma devices; Plasma materials processing; Plasma sources; Plasma temperature; Spectroscopy; Testing;
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
DOI :
10.1109/PPID.1998.725574
