Title :
Plasma process-induced charging during PECVD overlay nitride deposition
Author :
Moens, P. ; Viaene, J. ; Dobbelaere, W. ; Jastrzebski, L.
Author_Institution :
Alcatel Mietec, Oudenaarde, Belgium
Abstract :
Gate oxide degradation can occur during PECVD of the overlay nitride layer. In this paper, plasma damage monitor (PDM) and surface charge imaging (SCI) techniques are used to detect plasma damage on a Novellus Concept One PECVD system. By comparing the data with electrical transistor parameter shifts, the most important charging sources could be identified
Keywords :
dielectric thin films; integrated circuit reliability; integrated circuit testing; integrated circuit yield; plasma CVD; silicon compounds; surface charging; Novellus Concept One PECVD system; PECVD; PECVD overlay nitride deposition; Si; Si3N4-SiO2-Si; charging sources; electrical transistor parameter shifts; gate oxide degradation; overlay nitride layer; plasma damage; plasma damage monitor technique; plasma process-induced charging; surface charge imaging technique; CMOS process; Ceramics; Conductivity; Current measurement; Frequency; Furnaces; Monitoring; Oxidation; Plasma measurements; Threshold voltage;
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
DOI :
10.1109/PPID.1998.725576
