Development of SiGe materials and devices

Author

Peiyi, Chen

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

1

fYear

2001

fDate

2001

Firstpage

570

Abstract

This article reviews the development of investigations about SiGe materials and devices in Tsinghua University, China, which includes SiGe material growth, quality characterization of the SiGe material, and fabrication of SiGe devices. The growth technology of SiGe materials focuses on the UHVCVD tool, which was designed and built by our Institute. Latest achievements of SiGe material growth and SiGe device fabrication in Tsinghua University are reported. For example, the growth of strained SiGe films on Si, growth of relaxed SiGe buffered layers and tensile strained Si cap layers, processing of SiGe HBT, GeSi/Si HIP infrared detectors, SiGe HMOSFET etc, and Ge quantum dots grown by self-assembly technique, is introduced

Keywords

CVD coatings; Ge-Si alloys; semiconductor growth; semiconductor materials; semiconductor thin films; Ge quantum dot; GeSi/Si HIP infrared detectors; SiGe; SiGe HMOSFET; SiGe devices; SiGe materials; UHVCVD; devices fabrication; quality characterization; relaxed SiGe buffered layers; self-assembly; strained SiGe films; tensile strained Si cap layers; CMOS technology; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Hip; Infrared detectors; Radio frequency; Semiconductor films; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981544

Filename

981544