Title :
Development of SiGe/Si HBT
Author :
Shen, Guangdi ; Xu, Chen ; Chen, Jianxin ; Zou, Deshu ; Shi, Chen ; Deng, Jun ; Du, Jingyu ; Gao, Guo
Author_Institution :
Coll. of Electron. Eng., Beijing Polytech. Univ., China
Abstract :
The development of SiGe/Si HBT in the world is briefly reviewed and our recent research progress in high frequency SiGe/Si HBT is reported. A novel modulation doped quantum well base SiGe/Si HBT is proposed and fabricated. This new structure can reduce the base resistance effectively without increasing the average doping level in base. SiGe/Si HBT with βac over 24000 at 77 K was designed and fabricated. The effects of parasitic barrier induced by boron segregation and outdiffusion in the base were carefully studied, and reasonable width of i-SiGe spacers to prevent these phenomena was obtained by experiment and simulation. The nonideal current of Ib and Ic and their effects on the performance of the device were investigated
Keywords :
Ge-Si alloys; boron; elemental semiconductors; heterojunction bipolar transistors; segregation; semiconductor device noise; semiconductor doping; semiconductor materials; silicon; 77 K; B outdiffusion; B segregation; SiGe/Si HBT; SiGe:B-Si; base resistance; doping level; modulation doped quantum well HBT; nonideal current; parasitic barrier; CMOS technology; Costs; Doping; FET integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Microwave transistors; Radio frequency; Silicon germanium;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981546
