Development of SiGe/Si HBT

Author

Shen, Guangdi ; Xu, Chen ; Chen, Jianxin ; Zou, Deshu ; Shi, Chen ; Deng, Jun ; Du, Jingyu ; Gao, Guo

Author_Institution

Coll. of Electron. Eng., Beijing Polytech. Univ., China

Volume

1

fYear

2001

fDate

2001

Firstpage

580

Abstract

The development of SiGe/Si HBT in the world is briefly reviewed and our recent research progress in high frequency SiGe/Si HBT is reported. A novel modulation doped quantum well base SiGe/Si HBT is proposed and fabricated. This new structure can reduce the base resistance effectively without increasing the average doping level in base. SiGe/Si HBT with βac over 24000 at 77 K was designed and fabricated. The effects of parasitic barrier induced by boron segregation and outdiffusion in the base were carefully studied, and reasonable width of i-SiGe spacers to prevent these phenomena was obtained by experiment and simulation. The nonideal current of Ib and Ic and their effects on the performance of the device were investigated

Keywords

Ge-Si alloys; boron; elemental semiconductors; heterojunction bipolar transistors; segregation; semiconductor device noise; semiconductor doping; semiconductor materials; silicon; 77 K; B outdiffusion; B segregation; SiGe/Si HBT; SiGe:B-Si; base resistance; doping level; modulation doped quantum well HBT; nonideal current; parasitic barrier; CMOS technology; Costs; Doping; FET integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; III-V semiconductor materials; Microwave transistors; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981546

Filename

981546