A Simple Polysilicon Thin-Film Transistor SPICE Model

A simple current-voltage model for polysilicon thin-film transistors (TFTs) is proposed, including the sixth-order polynomial function coefficients fitted to the effective mobility versus gate voltage data, the channel length modulation and the impact ionization effect. The model possesses continuity of current in the transfer characteristics from weak to strong inversion and in the output characteristics throughout the linear and saturation regions of operation. It has been applied in a number of long and short channel TFTs and the statistical distributions of the model parameters involved have been derived. The new model was adapted in the simulation program AIM-SPICE, with the extracted parameters used as input parameters of the new polysilicon TFT model