Title :
The base dopant out diffusion and the optimized setback layers in SiGe HBT
Author :
Li, Zhiguo ; Zhang, Wanrong ; Wang, Dong ; Chang, Yaohai ; Sun, Yinghua
Author_Institution :
Reliability Phys. Lab, Beijing Polytech. Univ., China
Abstract :
The influences of the base dopant out-diffusion on SiGe HBT electrical characteristics are simulated numerically by ISE-TCAD software; at the some time, the action of the setback layers and difference between SiGe and Si setback layers are also simulated numerically. The simulation results indicated that the optimized width of SiGe and Si intrinsic setback layers are equal to and less than the length of the base dopant out-diffusion respectively. Finally, the model are confirmed by the experiment
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor doping; semiconductor materials; silicon; surface diffusion; ISE-TCAD software; Si setback layers; SiGe HBT; SiGe setback layers; SiGe-Si; base dopant out diffusion; base dopant out-diffusion length; electrical characteristics; optimized setback layers; Cutoff frequency; Degradation; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Numerical simulation; Poisson equations; Semiconductor process modeling; Silicon germanium; Testing;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981549
