The base dopant out diffusion and the optimized setback layers in SiGe HBT

Author

Li, Zhiguo ; Zhang, Wanrong ; Wang, Dong ; Chang, Yaohai ; Sun, Yinghua

Author_Institution

Reliability Phys. Lab, Beijing Polytech. Univ., China

Volume

1

fYear

2001

fDate

2001

Firstpage

596

Abstract

The influences of the base dopant out-diffusion on SiGe HBT electrical characteristics are simulated numerically by ISE-TCAD software; at the some time, the action of the setback layers and difference between SiGe and Si setback layers are also simulated numerically. The simulation results indicated that the optimized width of SiGe and Si intrinsic setback layers are equal to and less than the length of the base dopant out-diffusion respectively. Finally, the model are confirmed by the experiment

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor doping; semiconductor materials; silicon; surface diffusion; ISE-TCAD software; Si setback layers; SiGe HBT; SiGe setback layers; SiGe-Si; base dopant out diffusion; base dopant out-diffusion length; electrical characteristics; optimized setback layers; Cutoff frequency; Degradation; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Numerical simulation; Poisson equations; Semiconductor process modeling; Silicon germanium; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981549

Filename

981549