Title :
SiGe HV/CVD epitaxy growth on patterned Si substrate
Author :
Zhi-nong, Liu ; Pei-yi, Chen ; Yun-jie, Yan ; Pei-Hsin, Tsien
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
This letter investigates the SiGe epitaxy growth on patterned Si substrate (patterned SiO2 on Si substrate), and shows that the crystal quality of the SiGe/Si interface is excellent and that the SiGe epitaxial thin film on Si substrate in the patterned window is a single crystal
Keywords :
CVD coatings; Ge-Si alloys; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; SEM; Si; SiGe; SiGe HV/CVD epitaxy growth; SiO2; patterned Si substrate; CMOS technology; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Scanning electron microscopy; Semiconductor thin films; Silicon germanium; Substrates; Wireless communication;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981550
