Title :
The influence of substrate junctions on notch formation in the etching of storage stack polysilicon
Author :
Kang, Chang-Jin ; Jeong, Hong-Sik ; Shin, Kyoung-Sub ; Moon, Joo-Tae ; Lee, Moon-Yong
Author_Institution :
Semicond. Res. & Dev., Samsung Electron. Co. Ltd., Kyungki-do, South Korea
Abstract :
Notch formation during storage stack polysilicon etching depending on the various substrate junctions can be explained theoretically by the effect of charge flow through the p-n junctions. The ion charge flow through the junctions made the stack polysilicon potential lower, compared to that of the bottom oxide layer, and the notch was formed by the greater ion trajectory deflection
Keywords :
DRAM chips; dielectric thin films; elemental semiconductors; integrated circuit testing; p-n junctions; plasma materials processing; silicon; sputter etching; DRAM device; Si; SiO2-Si; bottom oxide layer; charge flow; etching; ion charge flow; ion trajectory deflection; notch formation; p-n junctions; stack polysilicon potential; storage stack polysilicon; storage stack polysilicon etching; substrate junction effect; substrate junctions; Capacitors; Electrodes; Electrons; Etching; P-n junctions; Plasma applications; Plasma immersion ion implantation; Plasma temperature; Silicon; Substrates;
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
DOI :
10.1109/PPID.1998.725587
