Title :
Manufacture of SiGe HMOSFET
Author :
Jin, Shi ; Peiyi, Chen ; Chen, Li ; Guangli, Luo ; Peiyu, Zhu ; Wentao, Huang ; Peihsin, Tsien ; Shurong, Li ; Yunfen, Zhen ; Weilian, Guo
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The advances in the growth of pseudomorphic silicon-germanium epitaxial layers combined with the strong need for high-speed devices have led to increased interest in silicon-based heterojunction field-effect transistors. Here we present a kind of strained SiGe-channel P-MOSFET which can offer better performance compared to the Si device. When applying to the sample with W/L value of 14/7, a 30% improvement can be achieved in transconductance
Keywords :
Ge-Si alloys; MOSFET; electrical conductivity; epitaxial growth; semiconductor device measurement; semiconductor growth; semiconductor materials; GeSi; SiGe HMOSFET; growth; high-speed devices; pseudomorphic silicon-germanium epitaxial layers; silicon-based heterojunction field-effect transistors; strained SiGe-channel P-MOSFET; transconductance; Buffer layers; Charge carrier processes; Germanium silicon alloys; MOSFET circuits; Manufacturing; Microelectronics; Oxidation; Particle scattering; Silicon germanium; Temperature;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981551
