Title :
SiGe/Si HBTs with current gain of negative temperature dependence
Author :
Deshu, Zou ; Chen, Xu ; Jianxin, Chen ; Chen, Shi ; Du Jinyu ; Jun, Deng ; Li, Zhang ; GuangDi, Shen
Author_Institution :
Beijing Optoelectronic Technol. Lab., Beijing Polytech. Univ., China
Abstract :
In this paper, we analysis the basic principle of SiGe/Si HBTs, design and fabricate power transistors with current gain of negative temperature dependence. The current gain of such transistors decreases from 33 to 20, when the temperature rises from 300 K to 385 K, at the case the quiescent current, Icm, is 200 mA and Vce is 2 V. These power HBTs are to be used in medium power amplifiers
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; power bipolar transistors; semiconductor device measurement; semiconductor materials; silicon; 2 V; 200 mA; 300 to 385 K; SiGe-Si; SiGe/Si HBTs; current gain; design; medium power amplifiers; negative temperature dependence; power HBTs; power transistors; quiescent current; Conducting materials; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Photonic band gap; Power amplifiers; Semiconductor materials; Silicon germanium; Temperature dependence;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981552
