Title :
High power and high cutoff frequencies of SiGe HBT
Author_Institution :
Microelectron. R&D Center, Acad. Sinica, Beijing, China
Abstract :
Si/SiGe heterojunction bipolar transistors (HBT´s) have been fabricated by growing the complete layer structure with high vacuum CVD. The main device process is shown in this paper. Experimental results show that the device output power reached 0.5 watts and the cutoff frequency reached 18 GHz. The devices are propitious to high power and high frequency RF circuits
Keywords :
CVD coatings; Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; silicon; vacuum deposited coatings; vapour phase epitaxial growth; 0.5 W; 18 GHz; Si-SiGe; Si/SiGe heterojunction bipolar transistors; SiGe HBT; complete layer structure; device output power; high cutoff frequencies; high power; high vacuum CVD; Bipolar transistors; Circuits; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Microelectronics; Power generation; Radio frequency; Silicon germanium;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981553
