• DocumentCode
    2207661
  • Title

    Numerical Investigation of O2 Adsorption Effect in Si - CF4/O2 System

  • Author

    Grigoryev, Yu.N. ; Gorobchuk, A.G.

  • Author_Institution
    Inst. of Computational Technol., Russian Acad. of Sci., Novosibirsk
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    503
  • Lastpage
    506
  • Abstract
    In the paper a hysteresis effect for the Si etching rate as a function of fluorine concentration in CF4/O2 gas mixture is discussed. An improved mathematical model for competition of fluorine and oxygen atoms on Si surface is considered. The influence of model parameters on a hysteresis curve is studied
  • Keywords
    adsorption; carbon compounds; elemental semiconductors; fluorine compounds; plasma CVD; silicon; sputter etching; CF4-O2; Si; Si etching; Si surface; adsorption effect; fluorine concentration; hysteresis curve; hysteresis effect; Chemicals; Etching; Hysteresis; Inductors; Kinetic theory; Mathematical model; Plasma applications; Plasma simulation; Plasma transport processes; Surface discharges;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2006 25th International Conference on
  • Conference_Location
    Belgrade
  • Print_ISBN
    1-4244-0117-8
  • Type

    conf

  • DOI
    10.1109/ICMEL.2006.1651012
  • Filename
    1651012
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2207661