Title :
Numerical Investigation of O2 Adsorption Effect in Si - CF4/O2 System
Author :
Grigoryev, Yu.N. ; Gorobchuk, A.G.
Author_Institution :
Inst. of Computational Technol., Russian Acad. of Sci., Novosibirsk
Abstract :
In the paper a hysteresis effect for the Si etching rate as a function of fluorine concentration in CF4/O2 gas mixture is discussed. An improved mathematical model for competition of fluorine and oxygen atoms on Si surface is considered. The influence of model parameters on a hysteresis curve is studied
Keywords :
adsorption; carbon compounds; elemental semiconductors; fluorine compounds; plasma CVD; silicon; sputter etching; CF4-O2; Si; Si etching; Si surface; adsorption effect; fluorine concentration; hysteresis curve; hysteresis effect; Chemicals; Etching; Hysteresis; Inductors; Kinetic theory; Mathematical model; Plasma applications; Plasma simulation; Plasma transport processes; Surface discharges;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1651012
