DocumentCode
2207681
Title
Dispersion Relation for Two-Valley QuasiHydrodynamic Models in SCWs Propagation in n-GaAs Thin Films
Author
Garcia-B, Abel ; Grimalsky, Volodymyr ; Gutierrez-D, E. ; Koshevaya, S.
Author_Institution
Dept. of Electron., INAOE, Puebla
fYear
0
fDate
0-0 0
Firstpage
507
Lastpage
510
Abstract
The space charge wave propagation in thin n-GaAs films has been considered within a framework of different quasi-hydrodynamic balance models. A comparative study of the dependencies k(omega) of a complex longitudinal wave number on frequency, which are obtained from different balance equation models are presented and discussed. It has been demonstrated that the model where the balance equations are written for different valleys directly seems to be the most correct. The balance models based on averaging over the valleys may lead to incorrect results in the case of long distances of propagation of space charge waves. When the thermal conductivity term is taken into account and the length of the system is short, the averaged balance models can get satisfactory results
Keywords
III-V semiconductors; dispersion relations; gallium arsenide; hydrodynamic model (elementary particles); semiconductor thin films; space charge waves; GaAs; SCW propagation; complex longitudinal wave; dispersion relation; long distance propagation; n-GaAs thin films; quasihydrodynamic balance models; space charge wave propagation; thermal conductivity; Charge carrier density; Differential equations; Dispersion; Electrons; Frequency; Gallium arsenide; Hydrodynamics; Space charge; Thermal conductivity; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2006 25th International Conference on
Conference_Location
Belgrade
Print_ISBN
1-4244-0117-8
Type
conf
DOI
10.1109/ICMEL.2006.1651013
Filename
1651013
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