Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETs

Author

Rao, V. Ramgopal ; Wijeratne, G. ; Chu, D. ; Brozek, T. ; Viswanathan, C.R.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1998

fDate

4-5 Jun 1998

Firstpage

124

Lastpage

127

Abstract

The effect of plasma damage on the MOSFET´s flicker noise properties is examined in this work. We observe an abnormal noise peak in the 1/f noise spectrum at around 2 kHz which is a characteristic of the plasma damage. The dependence of the noise peak on the plasma induced degradation was studied in virgin n- and p-channel MOSFETs and this peak is shown to correlate well with the amount of damage in the p-MOSFETs

Keywords

1/f noise; MOSFET; flicker noise; plasma materials processing; semiconductor device noise; semiconductor device testing; surface treatment; 1/f noise spectrum; 2 kHz; MOSFET flicker noise properties; MOSFETs; abnormal noise peak; n-channel MOSFETs; noise peak; p-MOSFET damage; p-channel MOSFETs; plasma damage; plasma damage effects; plasma induced degradation; plasma process induced abnormal 1/f noise behaviour; 1f noise; Degradation; Etching; MOSFET circuits; Noise figure; Plasma applications; Plasma devices; Plasma materials processing; Plasma properties; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1998 3rd International Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

0-9651577-2-5

Type

conf

DOI

10.1109/PPID.1998.725590

Filename

725590