Title :
Reliability investigation of DC characteristics under emitter-base reverse-bias stress in single-mesa Si/SiGe/Si HBTs grown by molecular beam epitaxy (MBE)
Author :
Wan-Rong, Zhang ; Li-xin, Wang ; Zhi-Guo, Li ; Fu-xian, Cui ; Jin-sheng, Luo ; Yinghua, Sun ; Jianxin, Chen ; Guang-Di, Shen
Author_Institution :
Dept. of Electron. Eng., Beijing Polytech. Univ., China
Abstract :
We investigate the reliability in DC characteristics of single-mesa SiGe HBT´s under reverse emitter-base stress due to hot holes. The results show that with an increase in stress time, the turn-on voltage (Vbe) increases, and the DC current gain (h FE=Ic/Ib) decreases, particularly at low forward base-emitter bias, however, AC current gain (β=ΔI c/ΔIb) degrades slowly
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; hot carriers; semiconductor device measurement; semiconductor device reliability; semiconductor materials; silicon; AC current gain; DC characteristics; DC current gain; MBE; Si-SiGe-Si; emitter-base reverse-bias stress; hot holes; low forward base-emitter bias; molecular beam epitaxy; reliability; reverse emitter-base stress; single-mesa Si/SiGe/Si HBTs; stress time; tum-on voltage; Circuits; Doping; Etching; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Molecular beam epitaxial growth; Silicon germanium; Stress; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981556
