Electrical degradation of CMOS devices due to focused ion beam exposure

Focused ion beams degrade CMOS devices by charging up the device surface. The presence of ions on the device surface is comparable to a plasma. We have performed measurements on CMOS test devices, and have hence modeled the influence of focused ion beams on transistors below the passivation layer. An in-depth analysis of these results has allowed us to characterize the modification of intrinsic parameters down to the semiconductor level. We have extracted these parameters in order to simulate FIB induced degradation on integrated circuits. These simulations aim to predict the impact of FIBs on the reliability of integrated circuits under irradiation