DocumentCode
2207702
Title
Diffusion-Drift Model of Fully Depleted SOI MOSFET
Author
Zebrev, G.I. ; Gorbunov, M.S.
Author_Institution
Dept. of Microelectron., Moscow Eng. Phys. Inst.
fYear
0
fDate
0-0 0
Firstpage
511
Lastpage
514
Abstract
Based on explicit analytical solution of drain current continuity equation a new compact physical model for fully depleted SOI MOSFET has been proposed. The model provides continuous description of I-V characteristics in all transistor operation modes
Keywords
MOSFET; diffusion barriers; silicon-on-insulator; I-V characteristics; diffusion-drift model; drain current continuity equation; fully depleted SOI MOSFET; transistor operation; Electrostatics; Equations; MOSFET circuits; Microelectronics; Neural networks; Physics; Power engineering and energy; Semiconductor device modeling; Silicon on insulator technology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2006 25th International Conference on
Conference_Location
Belgrade
Print_ISBN
1-4244-0117-8
Type
conf
DOI
10.1109/ICMEL.2006.1651014
Filename
1651014
Link To Document