Title :
Non ideal current in SiGe/Si HBT
Author :
Xu, Chen ; Zou, Deshu ; Chen, Jianxin ; Shi, Chen ; Deng, Jun ; Gao, Guo ; Shen, Guangdi
Author_Institution :
Optoelectron. Technol. Lab., Beijing Polytech. Univ., China
Abstract :
The non-ideal current in the Ib and Ic of the SiGe/Si HBT were studied. At low temperature it showed tunnel characteristics. From C-V and double crystal X-ray diffraction measurements, it was confirmed that this phenomena was related to the crystal quality in the base, emitter and their interface, but not related to the SiO-Si interface. The non-ideal current in Ic cannot be explained by the conventional drift-diffusion theory and is believed to be relevant to electrons tunneling from emitter or its depleted region to collector by means of an intermediate trap state in the base. However DLTS measurements shown that the phenomena have nothing to do with the deep levels in the emitter and collector
Keywords :
Ge-Si alloys; X-ray diffraction; deep level transient spectroscopy; electron traps; elemental semiconductors; heterojunction bipolar transistors; semiconductor materials; silicon; tunnelling; DLTS; HBT; SiGe-Si; double crystal X-ray diffraction; intermediate trap state; nonideal current; tunnel characteristics; Capacitance-voltage characteristics; Consumer electronics; Doping; Educational institutions; Germanium silicon alloys; Heterojunction bipolar transistors; Photonic band gap; Silicon germanium; Temperature; X-ray diffraction;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981559
