• DocumentCode
    2207785
  • Title

    Analysis of Surface Generation Mechanisms in MOS Capacitors

  • Author

    Kong, F. ; Tanner, P. ; Hold, L. ; Han, J. ; Dimitrijev, S.

  • Author_Institution
    Sch. of Microelectron. Eng., Griffith Univ., Nathan, Qld.
  • fYear
    0
  • fDate
    0-0 0
  • Firstpage
    521
  • Lastpage
    523
  • Abstract
    This paper demonstrates the extraction of MOS capacitor minority carrier generation lifetime and surface generation velocity from the measurement of deep-depletion capacitance transient. It is shown that the bulk generation lifetime, the lateral surface generation, and the surface generation under the gate can be separately determined by measuring test structures with different perimeter-to-area ratios
  • Keywords
    MOS capacitors; capacitance; minority carriers; MOS capacitors; bulk generation lifetime; deep-depletion capacitance transient; lateral surface generation; minority carrier generation lifetime; surface generation mechanism; surface generation velocity; Capacitance measurement; Dielectric constant; Lifetime estimation; MOS capacitors; Pulse generation; Pulse measurements; Silicon; Space charge; Transient analysis; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 2006 25th International Conference on
  • Conference_Location
    Belgrade
  • Print_ISBN
    1-4244-0117-8
  • Type

    conf

  • DOI
    10.1109/ICMEL.2006.1651017
  • Filename
    1651017
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2207785