• DocumentCode
    2207810
  • Title

    High injection region analysis and optimization of power transistors

  • Author

    Kotowski, T.W.

  • Author_Institution
    GMC, Kokomo, Indiana 46901
  • fYear
    1977
  • fDate
    14-16 June 1977
  • Firstpage
    27
  • Lastpage
    34
  • Abstract
    A model of base widening and the associated inverse mode base conductivity modulation is proposed. Expressions are obtained for saturated current gain (hFE) and cutoff frequency (fT) in double-diffused transistors for exponential, Gaussian, and erfc base impurity profiles. A convenient method for calculation of optimum transistor design variables is also given.
  • Keywords
    Conductivity; Current density; Cutoff frequency; Equations; Impurities; Modulation; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1977 IEEE
  • Conference_Location
    Palo Alto, CA, USA
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1977.7070800
  • Filename
    7070800
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2207810