Title :
SOI device and technology: modeling, characterization, and simulations
Author :
An, Judy Xilin ; Sinha, Shankar P. ; Wei, Andy ; Pelella, Mario M. ; Kepler, Nick J.
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
This paper reviews the applications of device modeling, characterization, and simulations of partially depleted (PD) SOI devices and technology for microprocessor designs. SOI-specific effects and characteristics, which make SOI different from bulk MOSFET, are discussed with underlying device physics and insights obtained from simulations using compact model and device simulator. Means for achieving the ultimate goal of SOI device and circuit designs, that is to maximize SOI performance while minimize undesirable effects, are also discussed in the paper
Keywords :
MOSFET; leakage currents; semiconductor device models; silicon-on-insulator; temperature distribution; thermal analysis; transient analysis; DC device simulations; SOI technology; Si; compact model; device characterization; device modeling; device physics; floating body effects; microprocessor designs; partially depleted SOI devices; self-heating effect; transient leakage; Circuit optimization; Circuit simulation; MOS devices; MOSFET circuits; Microprocessors; Predictive models; Semiconductor device modeling; Spontaneous emission; Threshold voltage; Tunneling;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981562
