Title :
Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs
Author :
Najeeb-ud-Din ; Dunga, M.V. ; Kumar, Aatish ; Rao, Ramgopal V. ; Vasi, Juzer
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India
Abstract :
This paper presents results on the characterization of Lateral Asymmetric Channel (LAC) thin film silicon-on-insulator (SOI) MOSFETs. These devices are compared with conventional SOI MOSFETs having uniform channel doping. The measurements have been taken for a number of channel lengths, silicon film thicknesses, and tilt angles of implantation. The aspects studied include threshold voltage roll-off, kink effect, gate induced drain leakage (GIDL) and parasitic bipolar transistor action. Measurements have been supplemented by device simulations. The LAC devices show excellent characteristics, with many advantages over the conventional devices
Keywords :
MOSFET; leakage currents; silicon-on-insulator; Si-SiO; channel lengths; film thicknesses; gate induced drain leakage; kink effect; lateral asymmetric channel; parasitic bipolar transistor; thin film SOI MOSFETs; threshold voltage roll-off; tilt angles; Doping; Length measurement; Los Angeles Council; MOSFETs; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Thickness measurement; Threshold voltage; Transistors;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981564
