DocumentCode
2207911
Title
Electron shading effects in high density plasma processing for very high aspect ratio structures
Author
Dostalik, W.W. ; Krishnan, S. ; Kinoshita, T. ; Rangan, S.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1998
fDate
4-5 Jun 1998
Firstpage
160
Lastpage
163
Abstract
Numerical simulations of feature scale charging due to plasma processing and the resulting injection current reveal an interesting trend as the aspect ratio is varied. For a particular set of high density ICP metal etch processing conditions, the aspect ratio is varied by changing the line spacing of a line and space antenna test structure in which the conductive layer in the space has not yet cleared, i.e. a latent antenna has formed. The simulation results indicate that after initially increasing with aspect ratio, the stress current begins to decrease with aspect ratio for those structures with very small line spacings, predicting reduced oxide damage
Keywords
dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; numerical analysis; plasma density; semiconductor process modelling; sputter etching; surface charging; aspect ratio; conductive layer clearance; electron shading effects; feature scale charging; high density ICP metal etch processing conditions; high density plasma processing; injection current; latent antenna formation; line and space antenna test structure; line spacing; numerical simulations; oxide damage; plasma processing; stress current; very high aspect ratio structures; Electrons; Etching; Numerical simulation; Plasma applications; Plasma density; Plasma materials processing; Plasma simulation; Predictive models; Stress; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location
Honolulu, HI
Print_ISBN
0-9651577-2-5
Type
conf
DOI
10.1109/PPID.1998.725599
Filename
725599
Link To Document