Title :
Stress Induced Leakage Currents and Charge Trapping in Thin Zr- and Hf-Silicate Layers
Author :
Paskaleva, A. ; Lemberger, M. ; Bauer, A.J.
Author_Institution :
Inst. of Solid State Phys., Sofia
Abstract :
In this paper, reliability aspects of thin Zr- and Hf-silicate layers are addressed by analyzing the stress induced leakage current (SILC) and charge trapping during constant voltage stress (CVS) and constant current stress (CCS). Voltage polarity and temperature effects on the degradation of the layers are also studied. SILC is found to have a transient component and its recovery is explained by the trapping/detrapping of traps participating in Poole-Frenkel conduction
Keywords :
dielectric materials; elemental semiconductors; hafnium; leakage currents; semiconductor device reliability; zirconium; Hf; Poole-Frenkel conduction; Zr; charge trapping; constant current stress; constant voltage stress; stress induced leakage currents; temperature effects; thin silicate layers; voltage polarity; Carbon capture and storage; Degradation; Electron traps; High K dielectric materials; High-K gate dielectrics; Leakage current; Performance evaluation; Stress measurement; Temperature; Voltage;
Conference_Titel :
Microelectronics, 2006 25th International Conference on
Conference_Location :
Belgrade
Print_ISBN :
1-4244-0117-8
DOI :
10.1109/ICMEL.2006.1651025
