Suppression of topography-dependent charging damage to MOS devices using pulse-time-modulated plasma

Author

Noguchi, K. ; Ohtake, H. ; Samukawa, S. ; Horiuchi, T.

Author_Institution

ULSI Device Dev. Labs., NEC Corp., Sagamihara, Japan

fYear

1998

fDate

4-5 Jun 1998

Firstpage

176

Lastpage

179

Abstract

Topography-dependent charging damage to MOS devices occurring during metal etching can be suppressed by using pulse-time-modulated plasma. The reliability of MOS devices fabricated using pulse-time-modulated plasma is investigated from the charge-to-breakdown and the threshold voltage as a function of the pulse interval and the antenna topography. We show that, with an increase in the interval of the microwave source power, the charging damage to the MOS devices is significantly reduced: the charging current is reduced to 1/5 at a pulse interval of 100 μsec

Keywords

MOSFET; electric breakdown; plasma materials processing; plasma radiofrequency heating; semiconductor device metallisation; semiconductor device reliability; semiconductor device testing; sputter etching; surface charging; surface topography; 100 mus; MOS devices; NMOSFET; antenna topography; charge-to-breakdown; charging current; charging damage; metal etching; microwave source power interval; pulse interval; pulse-time-modulated plasma; reliability; threshold voltage; topography-dependent charging damage; topography-dependent charging damage suppression; Etching; MOS devices; National electric code; Plasma applications; Plasma devices; Plasma properties; Plasma sources; Plasma waves; Pulse modulation; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1998 3rd International Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

0-9651577-2-5

Type

conf

DOI

10.1109/PPID.1998.725603

Filename

725603