DocumentCode
2208042
Title
Physics and Electrical Characterization of Excimer Laser Crystallized Polysilicon TFTs
Author
Michalas, L. ; Exarchos, M.A. ; Papaioannou, G.J. ; Kouvatsos, D.N. ; Voutsas, A.T.
Author_Institution
Dept. of Phys., Nat. & Kapodistrian Univ. of Athens
fYear
0
fDate
0-0 0
Firstpage
559
Lastpage
562
Abstract
The electrical properties of polycrystalline silicon thin film transistors are investigated. Transfer and transient characteristics have been recorded versus temperature, in the linear operation regime. Basic parameters such as subthreshold swing, leakage current and drain current overshoot transient are found to stem from the same deep states thermally activated carrier generation mechanism
Keywords
excimer lasers; semiconductor device manufacture; silicon; thin film transistors; Si; drain current; electrical characterization; excimer laser crystallized polysilicon TFT; leakage current; physics characterization; polycrystalline silicon thin film transistors; subthreshold swing; Crystallization; Laser sintering; Laser theory; Leakage current; Material properties; Physics; Silicon; Temperature dependence; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2006 25th International Conference on
Conference_Location
Belgrade
Print_ISBN
1-4244-0117-8
Type
conf
DOI
10.1109/ICMEL.2006.1651027
Filename
1651027
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