Title :
Fully-depleted SOI NMOS transistors with p+-polysilicon gate
Author :
Hai-Feng, Sun ; Xin-Yu, Liu ; Chao-he, Hai ; De-xin, Wu
Author_Institution :
Microelectron. R&D Center, Chinese Acad. of Sci., China
Abstract :
p+ polysilicon and n+ polysilicon were used as the gate material for fully-depleted SOI NMOS transistors. It´s found that n-channel transistors with p+ poly gates require lower channel doping levels than their n+ poly counterparts, leading to easier formation of depleted film and control of the threshold voltage. The low channel doping results in improved source-drain breakdown characteristic
Keywords :
MOSFET; SIMOX; etching; ion implantation; oxidation; semiconductor device breakdown; Si-SiO2; as-implanted SIMOX; depleted film; fully-depleted SOI NMOS transistors; lower channel doping levels; n-channel transistors; oxidation; p+-polysilicon gate; short-channel threshold dependence; source-drain breakdown characteristic; source-drain implantation; subthreshold characteristics; threshold voltage control; wet etching; Boron; Doping; Electric breakdown; Fabrication; MOSFET circuits; Semiconductor films; Silicon; Sun; Threshold voltage; Voltage control;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981595
