Title :
Impact of line/hole-antenna connected to well on plasma induced charging damage [IC interconnects]
Author :
Matsunaga, Noriaki ; Honda, Kenji ; Yoshinari, Hitomi ; Shibata, Hideki
Author_Institution :
Lab. of Microelectron. Eng., Toshiba Corp., Yokohama, Japan
Abstract :
The impact of both a dummy line-antenna connected to a MOSFET well (line-ACe pattern) and a dummy hole-antenna connected to a MOSFET well (hole-ACe pattern) on plasma induced charging damage was studied. It was found that the line-ACe pattern was effective for reduction of the charging damage. Reducing the distance between the line-ACe pattern and a functional line connected to the gate was found to be key to production of a sufficiently large effect from the line-ACe pattern. Significant charging damage reduction was confirmed for the hole-ACe pattern and the line-ACe pattern. These results suggest that the charging damage reduction is due to well potential modulation, and that the hole-ACe pattern is one of the most promising methods for reducing the charging damage in damascene interconnection structures
Keywords :
MOS integrated circuits; MOSFET; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; plasma materials processing; sputter etching; surface charging; IC interconnects; MOSFET well; RIE patterning; Si; SiO2-Si; charging damage; charging damage reduction; damascene interconnection structures; dummy hole-antenna; dummy line-antenna; functional line; hole-ACe pattern; line-ACe pattern; plasma induced charging damage; Etching; Fingers; Laboratories; Large scale integration; MOSFET circuits; Microelectronics; Plasma applications; Plasma devices; Plasma measurements; Testing;
Conference_Titel :
Plasma Process-Induced Damage, 1998 3rd International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-9651577-2-5
DOI :
10.1109/PPID.1998.725608
