A transient fuse scheme for plasma etch damage detection

Author

Krishnan, S. ; Brennan, K. ; Xing, G.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1998

fDate

4-5 Jun 1998

Firstpage

201

Lastpage

204

Abstract

We have devised a novel transient fuse scheme that separates charging during metal clear (latent antenna) damage from overetch damage (Krishnan et al., IEDM, p. 445, 1997). The transient fuse “auto-disconnects” during an etch process, thus profiling the damage during the etch process. Using this technique, we show instances in an inductively coupled plasma (ICP) metal etch where charging occurs exclusively during metal clear or overetch or both depending on process and hardware. We have also extended this application to polysilicon etch damage and propose its use as a protection device against latent antenna damage

Keywords

integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; integrated circuit yield; plasma materials processing; protection; sputter etching; ICP metal etch; ICP metal etch charging; charging; damage profiling; etch process; inductively coupled plasma (ICP) metal etch; latent antenna damage protection; metal clear latent antenna damage; overetch damage; plasma etch damage detection; polysilicon etch damage; transient fuse etch process auto-disconnect; transient fuse scheme; Electrons; Etching; Fuses; Geometry; Inductors; Plasma applications; Plasma chemistry; Plasma devices; Plasma measurements; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1998 3rd International Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

0-9651577-2-5

Type

conf

DOI

10.1109/PPID.1998.725609

Filename

725609