Stress mode of gate oxide charging during the MERIE and the ICP processing and its effect on the gate oxide reliability

Author

Kosaka, Yukiko ; Eriguchi, Koji ; Yamada, Takayuki

Author_Institution

Matsushita Electron. Corp., Kyoto, Japan

fYear

1998

fDate

4-5 Jun 1998

Firstpage

209

Lastpage

212

Abstract

The gate oxide charging (stressing) mode during plasma processing was investigated from the experimental data of two TDDB measurements, Q _bd and t_bd testings and the gate current behaviour in t_bd testing after the plasma treatment and the post-process current injection (electrical stress). It was confirmed that in some cases the t_bd, which determines the oxide lifetime under operating conditions, increases after the plasma treatments in both MERIE (magnetically enhanced RIE) and ICP processing

Keywords

dielectric thin films; electric breakdown; integrated circuit reliability; integrated circuit testing; plasma materials processing; sputter etching; surface charging; ICP processing; MERIE processing; Si; SiO₂-Si; TDDB measurements; charge-to-breakdown testing; electrical stress; gate current; gate oxide charging mode; gate oxide charging stress mode; gate oxide reliability; magnetically enhanced RIE; oxide lifetime; plasma processing; plasma treatment; post-process current injection; time-to-breakdown testing; Current measurement; Degradation; Design for quality; Electronic equipment testing; Electrons; Plasma applications; Plasma density; Plasma materials processing; Plasma measurements; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 1998 3rd International Symposium on

Conference_Location

Honolulu, HI

Print_ISBN

0-9651577-2-5

Type

conf

DOI

10.1109/PPID.1998.725611

Filename

725611