Title :
Fabrication and characteristics of Au/Cr/PZT/Pt/Ti/ZrO2/Si structure for MFMIS FET application
Author :
Yinyin, Lin ; Ting-ao, Tang ; Yun, Lu ; Weining, Huang ; Guobao, Jiang
Author_Institution :
ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China
Abstract :
Metal-ferroelectric-semiconductor (MFS) device is a very hopeful new generation memory device due to its unique properties such as non-volatility, non-destructive read out, high speed, good endurance, radiation tolerance and high density. However, the ferroelectric thin film usually cracks when it crystallizes on the buffer layer such as ZrO 2 thin film, which will make the device fail. We report, in this paper, the MFMIS structure of Au/Cr/PZT/Pt/Ti/ZrO2/Si was successfully fabricated to inhibit the PZT ferroelectric thin film from cracking. The C-V characteristic of the MFMIS capacitor was investigated
Keywords :
MIS structures; MISFET; chromium; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; gold; lead compounds; platinum; silicon; titanium; zirconium compounds; Au-Cr-PZT-Pt-Ti-ZrO2-Si; Au-Cr-PbZrO3TiO3-Pt-Ti-ZrO2-Si; Au/Cr/PZT/Pt/Ti/ZrO2/Si structure; C-V characteristic; MFMIS structure; ZrO2 thin film; device failure; ferroelectric film cracking inhibition; ferroelectric thin film cracking; high density; high speed memory device; metal-ferroelectric-semiconductor device; nondestructive read out; nonvolatile memory; Buffer layers; Capacitance-voltage characteristics; Capacitors; Chromium; Crystallization; Fabrication; Ferroelectric materials; Gold; Semiconductor thin films; Thin film devices;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981600
