Title :
A silicon-based PT/PZT/PT sandwich structure for memory devices
Author :
Ren, Tian-Ling ; Zhang, Lin-Tao ; Liu, Jian-She ; Liu, Li-Tian ; Li, Zhi-Jian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
High quality ferroelectric capacitor with a PT/PZT/PT sandwich structure prepared by an improved sol-gel method is proposed for FeRAM applications. This novel ferroelectric capacitor has high dielectric constant of about 1200, ultra-low leakage current density of 0.1 nA/cm, high remanent polarization of 20 μC/cm2 at coercive field of about 30 kV/cm, and almost fatigue free properties
Keywords :
elemental semiconductors; ferroelectric capacitors; ferroelectric storage; lead compounds; leakage currents; permittivity; random-access storage; silicon; sol-gel processing; FeRAM applications; PbTiO3-PbZrO3TiO3-PbTiO3; PbTiO3-PZT-PbTiO3; PbTiO3-PZT-PbTiO3 sandwich structure; Si; Si-based PT/PZT/PT sandwich structure; ferroelectric RAM; high dielectric constant; high quality ferroelectric capacitor; high remanent polarization; memory devices; sol-gel method; ultra-low leakage current density; Capacitors; Fatigue; Ferroelectric films; Ferroelectric materials; High-K gate dielectrics; Leakage current; Nonvolatile memory; Polarization; Random access memory; Sandwich structures;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981601
