Title :
The effect of thermal treatment on PLD derived Ba0.8Sr 0.2TiO3 thin film capacitor
Author :
Xing, Su ; Song, Zhitang ; Lin, Chenglu
Author_Institution :
State Key Lab. of Functional Mater. for Informatics, Acad. Sinica, Shanghai, China
Abstract :
Ba0.8Sr0.2TiO3 thin films were deposited on platinized substrates by PLD under different O2 ambients, and the effect of prolonged thermal treatment on the films was investigated. It is found that the annealing has different effect on the film deposited under different O2 ambients. The best leakage current property was achieved in annealed 10 Pa deposited film with forward leakage current of 2.42 × 10-8A/cm2 and reverse leakage current of 2.51 × 10-9A/cm2 under 1.5 V bias
Keywords :
annealing; barium compounds; ferroelectric capacitors; ferroelectric thin films; laser deposition; leakage currents; oxygen; strontium compounds; thin film capacitors; 1.5 V; 10 Pa; BST thin films; Ba0.8Sr0.2TiO3; Ba0.8Sr0.2TiO3 thin films; O2; O2 ambient; PLD; annealing; capacitor dielectrics; forward leakage current; leakage current property; platinized substrates; prolonged thermal treatment; reverse leakage current; thermal treatment; Annealing; Binary search trees; Capacitors; Dielectric thin films; Leakage current; Sputtering; Strontium; Substrates; Transistors; Variable speed drives;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981603
