• DocumentCode
    2208340
  • Title

    The effect of thermal treatment on PLD derived Ba0.8Sr 0.2TiO3 thin film capacitor

  • Author

    Xing, Su ; Song, Zhitang ; Lin, Chenglu

  • Author_Institution
    State Key Lab. of Functional Mater. for Informatics, Acad. Sinica, Shanghai, China
  • Volume
    1
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    714
  • Abstract
    Ba0.8Sr0.2TiO3 thin films were deposited on platinized substrates by PLD under different O2 ambients, and the effect of prolonged thermal treatment on the films was investigated. It is found that the annealing has different effect on the film deposited under different O2 ambients. The best leakage current property was achieved in annealed 10 Pa deposited film with forward leakage current of 2.42 × 10-8A/cm2 and reverse leakage current of 2.51 × 10-9A/cm2 under 1.5 V bias
  • Keywords
    annealing; barium compounds; ferroelectric capacitors; ferroelectric thin films; laser deposition; leakage currents; oxygen; strontium compounds; thin film capacitors; 1.5 V; 10 Pa; BST thin films; Ba0.8Sr0.2TiO3; Ba0.8Sr0.2TiO3 thin films; O2; O2 ambient; PLD; annealing; capacitor dielectrics; forward leakage current; leakage current property; platinized substrates; prolonged thermal treatment; reverse leakage current; thermal treatment; Annealing; Binary search trees; Capacitors; Dielectric thin films; Leakage current; Sputtering; Strontium; Substrates; Transistors; Variable speed drives;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-6520-8
  • Type

    conf

  • DOI
    10.1109/ICSICT.2001.981603
  • Filename
    981603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2208340