Title :
PbZr0.5Ti0.5O3 thin films prepared on La0.5Sr0.5CoO3/LaNiO3 heterostructures for integrated ferroelectric devices
Author :
Wang, G.S. ; Lai, Z.Q. ; Meng, X.I. ; Sun, J.L. ; Yu, J. ; Guo, S.L. ; Chu, I.H.
Author_Institution :
Nat. Lab. for Infrared Phys., Acad. Sinica, Shanghai, China
Abstract :
La0.5Sr0.5CoO3 /LaNiO3 (LSCO/LNO) heterostructures have been grown on Si(100) substrate by chemical solution deposition (MSD) technique. PbZr0.5Ti0.5O3 (PZT) thin films are deposited onto LSCO/LNO heterostructure by a modified sol-gel method. The films were crystallized by rapid thermal annealing (RTA) process. The lowest resistivity (550 μΩ·cm) of LSCO/LNO heterostructures was obtained by annealing at 750°C. Field-emission scanning electron microscopy and X-ray diffraction analysis show that LSCO/LNO and PZT thin films are polycrystalline and entirely perovskite phase. The Pt/PZ|T/LSCO/LNO capacitors were fabricated and showed no polarization fatigue after 109 switching cycles. The remnant polarization Pr and the coercive field Ec are about 28 μC/cm2 and 64 kV/cm, respectively. At a high frequency of 1 MHz, the dielectric constant of PZT thin films is 320
Keywords :
dielectric polarisation; electrical resistivity; ferroelectric capacitors; ferroelectric storage; ferroelectric switching; ferroelectric thin films; field emission electron microscopy; grain size; lead compounds; permittivity; rapid thermal annealing; scanning electron microscopy; sol-gel processing; texture; 750 C; La0.5Sr0.5CoO3-LaNiO3; NVRAM; PZT; PbZrO3TiO3; X-ray diffraction; capacitors; chemical solution deposition; coercive field; crystallinity; dielectric constant; ferroelectric properties; ferroelectric thin films; field-emission scanning electron microscopy; grain size; heterostructures; integrated ferroelectric devices; microstructures; modified sol-gel method; perovskite phase; preferential orientation; rapid thermal annealing; remnant polarization; resistivity; switching cycles; textured thin films; Chemicals; Conductivity; Crystallization; Polarization; Rapid thermal annealing; Rapid thermal processing; Scanning electron microscopy; Sputtering; Strontium; X-ray diffraction;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981604
