Title :
Evaluation of microwave GaAs MESFET performance
Author :
Saleh, Mohamed B. ; El-Sherief, A.Y. ; Rizk, M.R.M. ; Aboul-Seoud, A.K.
Author_Institution :
Arab Acad. for Sci. & Technol., Alexandria, Egypt
Abstract :
GaAs MESFET device for microwave frequencies is evaluated at various bias conditions. This evaluation is achieved through physically-based analytical model. A comparison has been carried out between our results and those obtained by both Shur analytical model (1984) and Curtice 2-D simulation-based model (1989). The frequency response obtained by the equivalent circuit generated from our model has been in good agreement with the experimental results
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; microwave field effect transistors; semiconductor device models; GaAs; analytical model; equivalent circuit; frequency response; microwave GaAs MESFET; Analytical models; Equivalent circuits; FETs; Gallium arsenide; MESFETs; Microwave devices; Microwave frequencies; Microwave transistors; Parasitic capacitance; Voltage;
Conference_Titel :
Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2972-4
DOI :
10.1109/MWSCAS.1995.510314
