Applying selective liquid-phase deposition to create contact holes in plasma damage-free process

We apply an alternative plasma damage-free process, selective liquid-phase deposition (S-LPD), instead of the conventional RIE to form metal/semiconductor contact holes. This paper studies the performance comparison between S-LPD and RIE for formation of contact holes in n⁺/p junction diodes, Schottky diodes, and ohmic contacts. In our experiments, if the plasma-free S-LPD technique is adopted, there is excellent performance, including lower reverse current, lower ideality factor, higher forward current, higher Schottky barrier, lower contact resistance and better thermal stability in these devices