Power gain using a short-conduction-time POS to drive an e-beam diode at 4 MV

Author

Commisso, R.J. ; Weber, B.V. ; Stephanakis, S.J. ; Swanekamp, S.B. ; Young, Frederic ; Goyer, J.R. ; Sincerny, P.S. ; Spence, P.W. ; Pereira, N.

Author_Institution

Plasma Phys. Div., Naval Res. Lab., Washington, DC, USA

fYear

2002

fDate

26-30 May 2002

Firstpage

212

Abstract

Summary form only given, as follows. The plasma opening switch (POS) has been used for vacuum power conditioning in pulsed power systems. In this work, we report on experiments coupling a 0.5-MA and 3-MA conduction-current, <100-ns conduction-time POS to an e-beam diode load at a POS voltage of /spl sim/4 MV. This investigation differs from previous POS work at this voltage, in that a conventional, pinched-beam diode is used and the goal is to optimize the POS-load coupling to maximize the forward-directed bremsstrahlung dose rate and reduce the x-ray pulse width.

Keywords

Monte Carlo methods; bremsstrahlung; plasma switches; pulse generators; pulsed power supplies; pulsed power switches; 0.5 MA; 3 MA; 4 MV; Gamble II generator; Monte-Carlo radiation modeling; PITHON generator; X-ray pulse width; diode impedance; electron-beam diode drive; forward-directed bremsstrahlung dose rate; geometrical impedance; higher-current regime; pinched-beam diode; power gain; short-conduction-time plasma opening switch; switch-load coupling; vacuum power conditioning; voltage diagnostics; Diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on

Conference_Location

Banff, Alberta, Canada

Print_ISBN

0-7803-7407-X

Type

conf

DOI

10.1109/PLASMA.2002.1030455

Filename

1030455