Title :
Ablation plasma ion implantation
Author :
Gilgenbach, Ronald M. ; Qi, B. ; Lau, Y.Y. ; Johnston, Mark D. ; Doll, G.L.
Author_Institution :
Intense Energy Beam Interaction Lab.., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Summary form only given, as follows. Experimental and theoretical research are underway to investigate a new technique for implanting ions generated from solid targets: ablation-plasma-ion-implantation (APII). Ablation plasmas are generated by an excimer laser incident on metal targets. The ablation laser is a KrF excimer laser (Lambda Physik Compex 205) which generates up to 600 mJ pulses at a repetition rate up to 50 Hz. The initial ablation targets are pure Fe and substrates are silicon wafers. Preliminary APII experiments pulse the substrate to negative voltages up to 10 kV. The properties (e.g., adhesion, morphology) of thin films deposited by laser ablative deposition are compared to films deposited with ablation-plasma-ion-implantation. Theoretical research is utilizing 1-dimensional particle in cell codes (e.g., XPDP1) to investigate the problem of ion extraction and acceleration from a moving sheath.
Keywords :
ion implantation; plasma deposition; plasma production by laser; plasma sheaths; plasma simulation; pulsed laser deposition; 10 kV; 50 Hz; 600 mJ; Fe; KrF; KrF excimer laser; Lambda Physik Compex 205 laser; Si; Si wafers; XPDP1 code; ablation laser; ablation plasma ion implantation; ablation plasmas; ablation-plasma-ion-implantation; adhesion; excimer laser; initial ablation targets; ion acceleration; ion extraction; laser ablative deposition; metal targets; morphology; moving sheath; negative voltages; one-dimensional particle in cell codes; repetition rate; solid targets; substrates; thin films; Adhesives; Ion implantation; Iron; Laser ablation; Laser theory; Optical pulse generation; Plasma immersion ion implantation; Silicon; Solids; Voltage;
Conference_Titel :
Plasma Science, 2000. ICOPS 2000. IEEE Conference Record - Abstracts. The 27th IEEE International Conference on
Conference_Location :
New Orleans, LA, USA
Print_ISBN :
0-7803-5982-8
DOI :
10.1109/PLASMA.2000.855022