DocumentCode
2209032
Title
Ablation plasma ion implantation
Author
Gilgenbach, Ronald M. ; Qi, B. ; Lau, Y.Y. ; Johnston, Mark D. ; Doll, G.L.
Author_Institution
Intense Energy Beam Interaction Lab.., Michigan Univ., Ann Arbor, MI, USA
fYear
2000
fDate
4-7 June 2000
Firstpage
209
Abstract
Summary form only given, as follows. Experimental and theoretical research are underway to investigate a new technique for implanting ions generated from solid targets: ablation-plasma-ion-implantation (APII). Ablation plasmas are generated by an excimer laser incident on metal targets. The ablation laser is a KrF excimer laser (Lambda Physik Compex 205) which generates up to 600 mJ pulses at a repetition rate up to 50 Hz. The initial ablation targets are pure Fe and substrates are silicon wafers. Preliminary APII experiments pulse the substrate to negative voltages up to 10 kV. The properties (e.g., adhesion, morphology) of thin films deposited by laser ablative deposition are compared to films deposited with ablation-plasma-ion-implantation. Theoretical research is utilizing 1-dimensional particle in cell codes (e.g., XPDP1) to investigate the problem of ion extraction and acceleration from a moving sheath.
Keywords
ion implantation; plasma deposition; plasma production by laser; plasma sheaths; plasma simulation; pulsed laser deposition; 10 kV; 50 Hz; 600 mJ; Fe; KrF; KrF excimer laser; Lambda Physik Compex 205 laser; Si; Si wafers; XPDP1 code; ablation laser; ablation plasma ion implantation; ablation plasmas; ablation-plasma-ion-implantation; adhesion; excimer laser; initial ablation targets; ion acceleration; ion extraction; laser ablative deposition; metal targets; morphology; moving sheath; negative voltages; one-dimensional particle in cell codes; repetition rate; solid targets; substrates; thin films; Adhesives; Ion implantation; Iron; Laser ablation; Laser theory; Optical pulse generation; Plasma immersion ion implantation; Silicon; Solids; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 2000. ICOPS 2000. IEEE Conference Record - Abstracts. The 27th IEEE International Conference on
Conference_Location
New Orleans, LA, USA
ISSN
0730-9244
Print_ISBN
0-7803-5982-8
Type
conf
DOI
10.1109/PLASMA.2000.855022
Filename
855022
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