A model for persistent conductivity ("lock-on" mechanism) in SI-GaAs photoconductive switches

Summary form only given, as follows. Due to the presence of a large concentration of trap sites in semiinsulating (SI) GaAs material used in photoconductive switches for high power microwave applications, and because of the field-dependent trapping/de-trapping phenomena, the carrier transport processes in these devices are more complex than in trap-free material. Depending on the application, the field in the devices may vary by orders of magnitude and a generalized analysis for all GaAs photoconductive switch used in different applications becomes difficult. In this simulation study we have looked into the charge transport characteristics of the devices where the field varies by more than two orders of magnitude.