RF components with high reliability and low loss by partial trench isolation of SOI-CMOS technology

Author

Furukawa, A. ; Hirano, Y. ; Ohnakado, T. ; Ikeda, T. ; Kagawa, Y. ; Shintani, K. ; Nishikawa, K. ; Yamakawa, S. ; Ipposhi, T. ; Maegawa, S. ; Takeda, M. ; Arima, H.

Author_Institution

Mitsubishi Electr. Corp., Hyogo

fYear

2006

fDate

11-13 June 2006

Lastpage

76

Abstract

This paper describes the experimental characteristics of RF components with layout and structural optimization, fabricated in 0.10-mum 1.2-V SOI-CMOS technology with partial trench isolation (PTI). ESD protection-grounded gate SOI-NMOSFETs achieve high reliability due to body-tied structure with PTI, and newly proposed ESD diodes also derive superior performance. Moreover, this technology offers a low loss RF switch and a broadband amplifier with low power consumption. These results are very promising for the fabrication of broadband RF integrated circuits

Keywords

CMOS integrated circuits; MOSFET circuits; electrostatic discharge; integrated circuit layout; integrated circuit reliability; isolation technology; low-power electronics; radiofrequency integrated circuits; silicon-on-insulator; 0.10 micron; 1.2 V; ESD diodes; ESD protection-grounded gate SOI-NMOSFET; SOI-CMOS technology; broadband RF integrated circuits; broadband amplifier; electrostatic discharge; layout optimization; partial trench isolation; radiofrequency components; radiofrequency switch; structural optimization; Broadband amplifiers; Diodes; Electrostatic discharge; Energy consumption; Integrated circuit reliability; Integrated circuit technology; Isolation technology; Protection; Radio frequency; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651094

Filename

1651094