Title :
A Study on RF Transistor Implementations on a 0.25 μm Digital CMOS Process
Author :
Mangaser, Jose Enrico R ; Gutierrez, Maria Cecilia N ; Hizon, John Richard E ; Alarcon, Louis P.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Philippines, Quezon City
Abstract :
Modeling MOSFET parasitics is vital as the operating frequency increases and enters the GHz range. To improve RF design capability, several common source NMOS transistors were implemented on a 0.25 μm digital CMOS process using various layout techniques described in literature. Relevant parasitics were then extracted and compared to identify the techniques that would maximize transistor performance for RF applications
Keywords :
CMOS digital integrated circuits; MOSFET; radiofrequency integrated circuits; 0.25 micron; MOSFET parasitics; NMOS transistor; RF transistor; digital CMOS process; layout techniques; metal-oxide-semiconductor field effect transistor; CMOS process; CMOS technology; Circuit simulation; Equivalent circuits; Integrated circuit technology; MOSFET circuits; Predictive models; Radio frequency; Semiconductor device modeling; Space technology;
Conference_Titel :
TENCON 2006. 2006 IEEE Region 10 Conference
Conference_Location :
Hong Kong
Print_ISBN :
1-4244-0548-3
Electronic_ISBN :
1-4244-0549-1
DOI :
10.1109/TENCON.2006.344151
