A 4th order SC bandpass ΣΔ modulator designed on a digital CMOS process

Author

Bazarjani, Seyfi S. ; Snelgrove, W. Martin

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada

Volume

2

fYear

1995

fDate

13-16 Aug 1995

Firstpage

1345

Abstract

This paper presents a 4th order SC bandpass ΣΔ modulator which is about 30% faster (independent of the process technology) than a previously reported counterpart. Higher speed is achieved without any increase in power dissipation or chip area. This modulator is implemented on a single poly digital CMOS process using SC resonators. PMOSFETs operating in strong inversion are used as capacitors. A SC analog delay circuit is presented whose linearity is insensitive to MOSFET capacitor non-linearity. The complete design was verified in Eldo analog simulator

Keywords

CMOS analogue integrated circuits; delay circuits; modulators; sigma-delta modulation; switched capacitor networks; 4th order ΣΔ modulator; ADC; Eldo analog simulator; SC analog delay circuit; SC bandpass ΣΔ modulator; SC resonators; delta-sigma modulator; design verification; digital CMOS process; single poly CMOS process; CMOS process; Capacitance; Capacitance-voltage characteristics; Capacitors; Delay; Delta modulation; Digital modulation; MOSFET circuits; Prototypes; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1995., Proceedings., Proceedings of the 38th Midwest Symposium on

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2972-4

Type

conf

DOI

10.1109/MWSCAS.1995.510347

Filename

510347