Title :
A low voltage (1.8V) operation triple band WCDMA transceiver IC
Author :
Tomiyama, Hitoshi ; Nishi, Chikara ; Ozawa, Nobuhisa ; Kamikubo, Yasunobu ; Honda, Hiroyasu ; Fujita, Hiroaki ; Kondo, Yuya ; Iizuka, Hiroshi ; Takahashi, Tomohiro
Author_Institution :
Semicond. Bus. Unit, Sony Corp., Atsugi
Abstract :
A highly integrated triple band (800MHz/1.7GHz/2.1GHz) WCDMA transceiver IC which operates at low voltage (1.8V) is described. All functionalities are implemented in a single chip using a 0.18mum SiGe BiCMOS process. The direct conversion receiver consists of triple band preamplifiers, I/Q demodulators, channel select filters, and PGAs. The direct transmit upconverter consists of a modulator, a three stage VGA, and triple PA drivers. No TX carrier leakage calibration is needed. Two synthesizers with automatically calibrated VCOs are fabricated on the same chip. The IC draws 35mA in receive and 39-61 mA in transmit using a 1.8V supply voltage
Keywords :
3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; code division multiple access; low-power electronics; microwave integrated circuits; transceivers; 0.18 micron; 1.7 GHz; 1.8 V; 2.1 GHz; 3.1 mA; 800 MHz; BiCMOS process; I/Q demodulators; SiGe; automatically calibrated VCO; channel select filters; direct transmit upconverter; transceiver integrated circuit; triple band WCDMA; triple band preamplifiers; voltage controlled oscillator; BiCMOS integrated circuits; Demodulation; Electronics packaging; Filters; Germanium silicon alloys; Low voltage; Multiaccess communication; Preamplifiers; Silicon germanium; Transceivers;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651117
