A low voltage (1.8V) operation triple band WCDMA transceiver IC

Author

Tomiyama, Hitoshi ; Nishi, Chikara ; Ozawa, Nobuhisa ; Kamikubo, Yasunobu ; Honda, Hiroyasu ; Fujita, Hiroaki ; Kondo, Yuya ; Iizuka, Hiroshi ; Takahashi, Tomohiro

Author_Institution

Semicond. Bus. Unit, Sony Corp., Atsugi

fYear

2006

fDate

11-13 June 2006

Abstract

A highly integrated triple band (800MHz/1.7GHz/2.1GHz) WCDMA transceiver IC which operates at low voltage (1.8V) is described. All functionalities are implemented in a single chip using a 0.18mum SiGe BiCMOS process. The direct conversion receiver consists of triple band preamplifiers, I/Q demodulators, channel select filters, and PGAs. The direct transmit upconverter consists of a modulator, a three stage VGA, and triple PA drivers. No TX carrier leakage calibration is needed. Two synthesizers with automatically calibrated VCOs are fabricated on the same chip. The IC draws 35mA in receive and 39-61 mA in transmit using a 1.8V supply voltage

Keywords

3G mobile communication; BiCMOS integrated circuits; Ge-Si alloys; code division multiple access; low-power electronics; microwave integrated circuits; transceivers; 0.18 micron; 1.7 GHz; 1.8 V; 2.1 GHz; 3.1 mA; 800 MHz; BiCMOS process; I/Q demodulators; SiGe; automatically calibrated VCO; channel select filters; direct transmit upconverter; transceiver integrated circuit; triple band WCDMA; triple band preamplifiers; voltage controlled oscillator; BiCMOS integrated circuits; Demodulation; Electronics packaging; Filters; Germanium silicon alloys; Low voltage; Multiaccess communication; Preamplifiers; Silicon germanium; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651117

Filename

1651117