• DocumentCode
    2210422
  • Title

    Preparation and Applications of Nanocrystalline Silicon Devices

  • Author

    Oda, Shunri

  • Author_Institution
    Tokyo Inst. of Technol.
  • fYear
    2006
  • fDate
    14-17 Nov. 2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Recent progress in the fabrication technology of silicon nanostructures has made possible observations of novel electrical and optical properties of silicon quantum dots, such as single electron tunneling, ballistic transport, visible photoluminescence and electron emission. Electron transport and photonic properties of silicon nanocrystals prepared by plasma processes are described with particular emphasis on fabrication of monodispersed silicon nanocrystals, high-density assembly of silicon quantum dots, silicon nanodot memory, NEMS devices, and silicon photonic devices
  • Keywords
    nanostructured materials; nanotechnology; semiconductor quantum dots; NEMS device; fabrication technology; monodispersed silicon nanocrystal; nanostructure; optical property; plasma processes; silicon photonic device; silicon quantum dots; Electron emission; Electron optics; Nanocrystals; Nanoscale devices; Nanostructures; Optical device fabrication; Plasma properties; Quantum dots; Silicon devices; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    TENCON 2006. 2006 IEEE Region 10 Conference
  • Conference_Location
    Hong Kong
  • Print_ISBN
    1-4244-0548-3
  • Electronic_ISBN
    1-4244-0549-1
  • Type

    conf

  • DOI
    10.1109/TENCON.2006.343729
  • Filename
    4142661