DocumentCode
2210422
Title
Preparation and Applications of Nanocrystalline Silicon Devices
Author
Oda, Shunri
Author_Institution
Tokyo Inst. of Technol.
fYear
2006
fDate
14-17 Nov. 2006
Firstpage
1
Lastpage
4
Abstract
Recent progress in the fabrication technology of silicon nanostructures has made possible observations of novel electrical and optical properties of silicon quantum dots, such as single electron tunneling, ballistic transport, visible photoluminescence and electron emission. Electron transport and photonic properties of silicon nanocrystals prepared by plasma processes are described with particular emphasis on fabrication of monodispersed silicon nanocrystals, high-density assembly of silicon quantum dots, silicon nanodot memory, NEMS devices, and silicon photonic devices
Keywords
nanostructured materials; nanotechnology; semiconductor quantum dots; NEMS device; fabrication technology; monodispersed silicon nanocrystal; nanostructure; optical property; plasma processes; silicon photonic device; silicon quantum dots; Electron emission; Electron optics; Nanocrystals; Nanoscale devices; Nanostructures; Optical device fabrication; Plasma properties; Quantum dots; Silicon devices; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2006. 2006 IEEE Region 10 Conference
Conference_Location
Hong Kong
Print_ISBN
1-4244-0548-3
Electronic_ISBN
1-4244-0549-1
Type
conf
DOI
10.1109/TENCON.2006.343729
Filename
4142661
Link To Document