• DocumentCode
    2210426
  • Title

    Design considerations for potential environmental implications driving selection of semiconductor starting material

  • Author

    Mccall, Jennifer ; Anderson, Samuel

  • Author_Institution
    Semicond. Prod. Sector, Motorola Inc., Phoenix, AZ, USA
  • fYear
    1994
  • fDate
    2-4 May 1994
  • Firstpage
    246
  • Lastpage
    251
  • Abstract
    When selecting a material for power device design, the parameters of cost, performance and reliability are critical to the selection process. Another equally important parameter is the potential environmental implication of the material. This paper compares a conventional power switch transistor, called an insulated gate bipolar transistor, with a simplified structure, called a nonepi IGBT, that uses fewer processing steps
  • Keywords
    epitaxial growth; insulated gate bipolar transistors; pollution; power transistors; semiconductor device manufacture; semiconductor switches; cost; environmental implication; insulated gate bipolar transistor; nonepi IGBT; performance; power device design; power switch transistor; processing steps; reliability; selection process; semiconductor manufacturing; Costs; Crystalline materials; Furnaces; Insulated gate bipolar transistors; Minerals; Power semiconductor switches; Semiconductor device manufacture; Semiconductor materials; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and the Environment, 1994. ISEE 1994., Proceedings., 1994 IEEE International Symposium on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-1769-6
  • Type

    conf

  • DOI
    10.1109/ISEE.1994.337250
  • Filename
    337250