Title :
Design considerations for potential environmental implications driving selection of semiconductor starting material
Author :
Mccall, Jennifer ; Anderson, Samuel
Author_Institution :
Semicond. Prod. Sector, Motorola Inc., Phoenix, AZ, USA
Abstract :
When selecting a material for power device design, the parameters of cost, performance and reliability are critical to the selection process. Another equally important parameter is the potential environmental implication of the material. This paper compares a conventional power switch transistor, called an insulated gate bipolar transistor, with a simplified structure, called a nonepi IGBT, that uses fewer processing steps
Keywords :
epitaxial growth; insulated gate bipolar transistors; pollution; power transistors; semiconductor device manufacture; semiconductor switches; cost; environmental implication; insulated gate bipolar transistor; nonepi IGBT; performance; power device design; power switch transistor; processing steps; reliability; selection process; semiconductor manufacturing; Costs; Crystalline materials; Furnaces; Insulated gate bipolar transistors; Minerals; Power semiconductor switches; Semiconductor device manufacture; Semiconductor materials; Silicon; Temperature;
Conference_Titel :
Electronics and the Environment, 1994. ISEE 1994., Proceedings., 1994 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-1769-6
DOI :
10.1109/ISEE.1994.337250
