DocumentCode
2210426
Title
Design considerations for potential environmental implications driving selection of semiconductor starting material
Author
Mccall, Jennifer ; Anderson, Samuel
Author_Institution
Semicond. Prod. Sector, Motorola Inc., Phoenix, AZ, USA
fYear
1994
fDate
2-4 May 1994
Firstpage
246
Lastpage
251
Abstract
When selecting a material for power device design, the parameters of cost, performance and reliability are critical to the selection process. Another equally important parameter is the potential environmental implication of the material. This paper compares a conventional power switch transistor, called an insulated gate bipolar transistor, with a simplified structure, called a nonepi IGBT, that uses fewer processing steps
Keywords
epitaxial growth; insulated gate bipolar transistors; pollution; power transistors; semiconductor device manufacture; semiconductor switches; cost; environmental implication; insulated gate bipolar transistor; nonepi IGBT; performance; power device design; power switch transistor; processing steps; reliability; selection process; semiconductor manufacturing; Costs; Crystalline materials; Furnaces; Insulated gate bipolar transistors; Minerals; Power semiconductor switches; Semiconductor device manufacture; Semiconductor materials; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics and the Environment, 1994. ISEE 1994., Proceedings., 1994 IEEE International Symposium on
Conference_Location
San Francisco, CA
Print_ISBN
0-7803-1769-6
Type
conf
DOI
10.1109/ISEE.1994.337250
Filename
337250
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