A bipolar ECL static RAM with polysilicon diode loaded memory cell using single poly technology

Author

Hwang, B.-Y. ; Kirchgessner, Jim ; Bushey, Tom ; Foertsch, Sam ; Stipanuk, Jim ; Marshbanks, Larry ; Hernandez, Jaime ; Herald, Eric

Author_Institution

Motorola Inc., Mesa, AZ, USA

fYear

1988

fDate

12-13 Sep 1988

Firstpage

28

Lastpage

31

Abstract

A 1 K×1 bipolar emitter coupled logic (ECL) static random access memory (RAM) using a polysilicon diode loaded memory cell is realised in a single poly bipolar process technology. The use of the polysilicon diode as the load element for the memory cell is made possible by the fact that its I-V characteristics exhibit an ideality factor of two. The hold voltage for the memory cell is larger than 240 mV over a wide range of cell currents with the lower bound residing in the sub-μA range. Results show extremely stable operation against row select sensitivity. A 1.5-ns row address access time has been obtained from the test circuit

Keywords

bipolar integrated circuits; emitter-coupled logic; integrated memory circuits; random-access storage; 1 kbit; 1.5 ns; I-V characteristics; bipolar ECL static RAM; cell currents; hold voltage; ideality factor; polysilicon diode loaded memory cell; row address access time; single poly technology; stable operation; Circuit testing; Equations; Random access memory; Read-write memory; Schottky diodes; Semiconductor diodes; Silicon; Temperature; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1988.51038

Filename

51038