Title :
10 GHz VCO for 0.13/spl mu/m CMOS Sonet CDR
Author :
Titus, Ward S. ; Kenney, John G.
Author_Institution :
Analog Devices, Somerset, NJ
Abstract :
A 10 GHz VCO with 1.3:1 KVCO variation and 2 MHz/V supply pushing is developed for a dual channel Sonet CDR IC using MOS inversion mode varactors with their backgates tied to a common mode voltage and with an automatic leveling loop to control oscillator amplitude and varactor linearization. Three such oscillators are combined with buffers and a passive switch MUX to achieve an 8-12 GHz tuning range and 27mW DC power consumption on a 1.8V unregulated supply. The VCOs are fabricated in a 0.13mum CMOS digital process with added MIMCAP support but thin metal interconnect using thick oxide transistors normally provided for 3V I/O. A moderate -112 dBc/Hz phase noise at 1 MHz offset is achieved which is sufficient to exceed OC-192 Sonet random jitter generation requirements by a factor of 2
Keywords :
CMOS digital integrated circuits; SONET; microwave oscillators; varactors; voltage-controlled oscillators; 0.13 micron; 1.8 V; 27 mW; 8 to 12 GHz; CMOS Sonet CDR; CMOS digital process; MOS inversion mode varactors; Sonet CDR IC; VCO; common mode voltage; metal interconnect; oscillator amplitude; passive switch MUX; phase noise; power consumption; thick oxide transistors; varactor linearization; CMOS process; Energy consumption; Jitter; Phase locked loops; Phase noise; SONET; Switches; Varactors; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
DOI :
10.1109/RFIC.2006.1651162