DocumentCode :
2210830
Title :
An SOI CMOS, high gain and low noise transimpedance-limiting amplifier for 10Gb/s applications
Author :
Pera, Florin ; Voinigescu, Sorin P.
Author_Institution :
Innovative Syst. & Technol. Corp., Kanata, Ont.
fYear :
2006
fDate :
11-13 June 2006
Lastpage :
360
Abstract :
This paper presents a low noise, high gain transimpedance-limiting amplifier (TIALA) design for 10Gb/s applications, implemented in a 0.13mum SOI CMOS technology. Powered from a single 1.5V supply and consuming 165mW, the TIALA features auto-zero DC feedback and has 25muApp input current sensitivity (an estimated -16dBm optical sensitivity) with over 40dB electrical dynamic range and 14 kOhm linear gain
Keywords :
CMOS integrated circuits; low noise amplifiers; operational amplifiers; silicon-on-insulator; 0.13 micron; 1.5 V; 10 Gbit/s; 14 kohm; 165 mW; 25 muA; SOI CMOS technology; TIALA design; auto-zero DC feedback; input current sensitivity; optical sensitivity; transimpedance-limiting amplifier design; CMOS technology; Capacitors; Circuit noise; Germanium silicon alloys; Inductors; Low-noise amplifiers; MOS devices; Optical amplifiers; Silicon germanium; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-9572-7
Type :
conf
DOI :
10.1109/RFIC.2006.1651165
Filename :
1651165
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2210830
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